The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
May. 23, 2019
Applicant:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Inventors:
Tomohiro Gunji, Tokyo, JP;
Yuukou Tsushima, Tokyo, JP;
Assignee:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); G11C 16/0408 (2013.01); G11C 16/30 (2013.01); H01L 29/0847 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract
The object of the present invention is to provide a nonvolatile storage element capable of suppressing retention degradation. A nonvolatile storage element is provided with a semiconductor substrate and a floating gate provided above the semiconductor substrate, in which the floating gate has an area of 30 μmor more.