The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Apr. 29, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Syunki Narita, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
Insulated gate semiconductor device includes drift layer of first conductivity type; first base region of second conductivity type on the drift layer; carrier-supply region of the first conductivity type on the first base region and having higher impurity concentration than the drift layer; a first contact region of the second conductivity type on the first base region and having higher impurity concentration than the first base regions; cell-pillars each having polygonal-shape, arranged in a lattice-pattern, sidewalls of the cell-pillars are defined by trenches penetrating the carrier-supply region, the first contact region, and the first base region; and insulated-gate electrode-structures in the trenches. A first pillar selected from the cell-pillars includes the carrier-supply region, the first contact region and the first base region, and the first contact regions are in contact with a limited portion of an outer periphery of a first pillar at a top surface of the first pillar.