The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Mar. 22, 2016
Applicant:

Wai Yee Liu, Hong Kong, CN;

Inventors:

Xianda Zhou, Hong Kong, CN;

Wai Yee Liu, Hong Kong, CN;

Johnny Kin On Sin, Hong Kong, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/0615 (2013.01); H01L 29/1095 (2013.01); H01L 29/7802 (2013.01); H01L 29/7816 (2013.01);
Abstract

The present invention discloses a rugged power semiconductor field effect transistor structure, and through a special design, it solves the problem that the activation under a transient condition may result in failures on the device, so that there is no parasitic BJT, and thus the device is more rugged.


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