The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Dec. 28, 2018
Method for manufacturing a magnetic tunnel junction device and device manufactured using such method
Imec Vzw, Leuven, BE;
Gouri Sankar Kar, Leuven, BE;
Stefan Cosemans, Leuven, BE;
IMEC vzw, Leuven, BE;
Abstract
A magnetic tunnel junction memory device is disclosed. In one aspect, the memory device comprises a substrate, a first memory element, and a second memory element, wherein the first memory element and the second memory element are formed of a stack comprising at least a first layer and a second layer, the first layer being arranged between the substrate and the second layer. The memory device further comprises a first selector device arranged to contact the first memory element, and a second selector device arranged to contact the second memory element, wherein the first selector device and the second selector device are arranged in or above the second layer. The first memory element and the second memory element are interconnected via the first layer, and are separated from each other by a trench formed in the second layer.