The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jul. 31, 2019
Applicant:
Osram Oled Gmbh, Regensburg, DE;
Inventors:
Christoph Eichler, Donaustauf, DE;
Andre Somers, Obertraubling, DE;
Harald Koenig, Bernhardswald, DE;
Bernhard Stojetz, Wiesent, DE;
Andreas Loeffler, Neutraubling, DE;
Alfred Lell, Maxhuette-Haidhof, DE;
Assignee:
OSRAM OLED GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01S 5/22 (2006.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 21/268 (2006.01); H01L 21/3105 (2006.01); H01L 21/324 (2006.01); H01S 5/20 (2006.01); H01S 5/223 (2006.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 27/1285 (2013.01); H01L 21/0254 (2013.01); H01L 21/02104 (2013.01); H01L 21/02293 (2013.01); H01L 21/02365 (2013.01); H01L 21/02617 (2013.01); H01L 21/02647 (2013.01); H01L 21/20 (2013.01); H01L 21/2022 (2013.01); H01L 21/268 (2013.01); H01L 21/3105 (2013.01); H01L 21/3247 (2013.01); H01L 21/76248 (2013.01); H01L 21/76272 (2013.01); H01L 27/1281 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01S 5/222 (2013.01); H01L 21/02636 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 2933/0016 (2013.01); H01S 5/2068 (2013.01); H01S 5/2077 (2013.01); H01S 5/223 (2013.01); H01S 2304/00 (2013.01);
Abstract
A method for producing a semiconductor chip () is provided, in which, during a growth process for growing a first semiconductor layer (), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (), such that a lateral variation of a material composition of the first semiconductor layer () is produced. A semiconductor chip () is additionally provided.