The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Apr. 19, 2019
Applicants:

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Hongru Zhou, Beijing, CN;

Yongliang Zhao, Beijing, CN;

Zhonghao Huang, Beijing, CN;

Zhaojun Wang, Beijing, CN;

Chao Zhang, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1244 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

The disclosure discloses a thin film transistor, a method for fabricating the same, an array substrate, and a display panel. The thin film transistor includes: a first conductive layer on a base substrate, a first insulation layer on a side of the first conductive layer facing away from the base substrate, and a second conductive layer on a side of the first insulation layer facing away from the first conductive layer, wherein an active layer is arranged on a side of the first insulation layer facing the first conductive layer, and/or a side thereof facing the second conductive layer.


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