The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jul. 22, 2016
Applicant:
Exogenesis Corporation, Billerica, MA (US);
Inventors:
Sean R. Kirkpatrick, Littleton, MA (US);
Richard C. Svrluga, Cambridge, MA (US);
Assignee:
Exogenesis Corporation, Billerica, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C03C 15/02 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); C03C 15/00 (2006.01); H01L 21/265 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C03C 15/00 (2013.01); C03C 15/025 (2013.01); H01L 21/0234 (2013.01); H01L 21/02115 (2013.01); H01L 21/02167 (2013.01); H01L 21/02227 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/02326 (2013.01); H01L 21/26566 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/3105 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01J 2237/061 (2013.01); H01J 2237/0812 (2013.01);
Abstract
A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.