The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Oct. 30, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bruce B. Doris, Slingerlands, NY (US);

Michael A. Guillorn, Cold Springs, NY (US);

Isaac Lauer, Yorktown Heights, NY (US);

Xin Miao, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02603 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.


Find Patent Forward Citations

Loading…