The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Sep. 19, 2018
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Arito Ogawa, Toyama, JP;

Yukinao Kaga, Toyama, JP;

Kazuhiro Harada, Toyama, JP;

Motomu Degai, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); H01L 21/3205 (2006.01); H01L 21/033 (2006.01); C23C 16/34 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02186 (2013.01); C23C 16/34 (2013.01); C23C 16/36 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); C23C 16/45561 (2013.01); H01L 21/0228 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/3081 (2013.01); H01L 21/32051 (2013.01);
Abstract

A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.


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