The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jan. 13, 2016
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Toan Q. Tran, San Jose, CA (US);
Soonam Park, Sunnyvale, CA (US);
Junghoon Kim, Santa Clara, CA (US);
Dmitry Lubomirsky, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32357 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01L 21/311 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01);
Abstract
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.