The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Feb. 20, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Rajdeep Gautam, Yokohama, JP;

Ken Oowada, Yokohama, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/3459 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/11519 (2013.01); H01L 27/11565 (2013.01);
Abstract

Systems and methods for increasing cycling endurance and minimizing over programming of non-volatile memory cells by modulating the programming voltage applied to the non-volatile memory cells over time as the number of program/erase cycles increases are described. A bit count ratio based on bit counts within two threshold voltage zones may be used to determine the amount of voltage reduction in the programming voltage applied during subsequent programming operations. For example, if the bit count ratio is between 0.02 and 0.05, then the reduction in the programming voltage may be 100 mV; if the bit count ratio is between 0.05 and 0.10, then the reduction in the programming voltage may be 200 mV. The modulation (e.g., the reduction) of the programming voltage may be performed at varying cycle intervals depending on the total number of program/erase cycles for a memory block and/or the bit count ratio.


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