The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Nov. 26, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Seon Ju Lee, Gyeonggi-do, KR;

Min Hwan Moon, Seoul, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 29/04 (2006.01); H04L 1/00 (2006.01); H03M 13/00 (2006.01); H03M 13/11 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1068 (2013.01); G11C 29/52 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01);
Abstract

A memory controller having improved read performance controls a memory device including a plurality of memory cells. The memory controller includes a read operation controller, a history bias storage, and a read voltage setting circuit. The read operation controller read data stored selected memory cells among the plurality of memory cells. The history bias storage stores a plurality of history mean biases, which are mean biases of a plurality of threshold voltage distributions that the plurality of memory cells have, and a plurality of reference cell count values respectively corresponding to the plurality of threshold voltage distributions.


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