The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Mar. 18, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yunjung Lee, Suwon-si, KR;

Chanha Kim, Hwaseong-si, KR;

Suk-eun Kang, Hwaseong-si, KR;

Seungkyung Ro, Anyang-si, KR;

Kwangwoo Lee, Seoul, KR;

Juwon Lee, Hwaseong-si, KR;

Jinwook Lee, Seoul, KR;

Heewon Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 16/3495 (2013.01); G11C 29/52 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01);
Abstract

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.


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