The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Mar. 03, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kazuharu Yamabe, Yokkaichi Mie, JP;

Qianqian Xu, Nagoya Aichi, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 11/5621 (2013.01); G11C 11/5671 (2013.01); G11C 16/14 (2013.01);
Abstract

A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.


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