The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Jul. 02, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Dong Uk Lee, Gyeonggi-do, KR;

Hun Wook Lee, Incheon, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G06F 11/22 (2006.01); G06F 11/10 (2006.01); G11C 29/42 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 11/102 (2013.01); G06F 11/2215 (2013.01); G06F 13/1668 (2013.01); G11C 29/42 (2013.01);
Abstract

A controller comprises an error correction circuit configured to check an error bit number of error bits in the read data and correct the error bits; a read retry range setting circuit configured to reset a preset read retry range with respect to the read data, and set a new read retry range based on the error bit number and an error correction capability of the error correction circuit; a read voltage setting circuit configured to reset the set read voltage and set, as a new read voltage, a voltage among a plurality of voltages of the reset read retry range, corresponding to the new read retry range; and a flash control circuit configured to control the memory device to perform a read retry operation on the stored data, using the new read voltage.


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