The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

May. 18, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Minkyu Woo, Yongin-si, KR;

Minku Lee, Yongin-si, KR;

Junwon Choi, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); H01L 27/32 (2006.01); G09G 3/3266 (2016.01); H01L 51/56 (2006.01); G09G 3/3275 (2016.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); H01L 27/3216 (2013.01); H01L 27/3218 (2013.01); H01L 27/3262 (2013.01); H01L 51/56 (2013.01); G09G 2300/0452 (2013.01); G09G 2300/0852 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0262 (2013.01); G09G 2310/0278 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01); H01L 51/5203 (2013.01);
Abstract

A display device includes: a first driving transistor including a first gate electrode and a first semiconductor layer including a first source region and a first drain region, the first driving transistor being in a first pixel area of a substrate; a second driving transistor including a second gate electrode and a second semiconductor layer including a second source region and a second drain region, the second driving transistor being in a second pixel area adjacent the first pixel area of the substrate; a first electrode layer overlapping at least a portion of the first source region of the first driving transistor; a second electrode layer overlapping at least a portion of the second source region of the second driving transistor; a first power line electrically connected to the first electrode layer; and a second power line electrically connected to the second electrode layer.


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