The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

May. 25, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kevin W. Brew, Albany, NY (US);

Talia S. Gershon, White Plains, NY (US);

Seyoung Kim, Westchester, NY (US);

Jerry D. Tersoff, Blauvelt, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G06N 3/04 (2006.01); G11C 13/00 (2006.01); G06N 3/08 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
G06N 3/04 (2013.01); G06N 3/0635 (2013.01); G06N 3/084 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/147 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/51 (2013.01);
Abstract

Memristive devices and methods for setting the resistance of a memristive device include a first mixed conducting layer formed from a first material having a resistance that changes depending on an ion concentration and having multiple coexisting phases from concentration-dependent metastability. A second metastable, mixed conducting layer is formed from the first material. A barrier layer between the first conductor layer and the second conductor layer is formed from a second mixed conducting material having a chemical potential that prevents thermal ion diffusion between the first and second layer. The barrier layer provides an electrical threshold, above which ions are transferred between the first and second layer and below which the resistance of the device is read.


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