The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Aug. 26, 2019
Applicant:
Ictk Holdings Co., Ltd., Seongnam-si, KR;
Inventors:
Assignee:
ICTK Holdings Co., Ltd., Seongnam-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/00 (2020.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); G03F 1/44 (2012.01); G03F 1/70 (2012.01); G09C 1/00 (2006.01); G03F 1/36 (2012.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 1/36 (2013.01); G03F 1/44 (2013.01); G03F 1/70 (2013.01); G09C 1/00 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H04L 2209/12 (2013.01);
Abstract
Disclosed is a method of generating a physical unclonable function (PUF) by causing unpredictable partial process failure for a semiconductor process. In a designing process, a second mask pattern may be printed by distorting a size and/or shape of at least one mask window included in a designed first mask pattern, without violating semiconductor design rules. A PUF may be generated using a photomask including the printed second mask pattern for photolithography.