The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Jul. 02, 2019
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Miao Zhang, Beijing, CN;

Wuxia Fu, Beijing, CN;

Songmei Sun, Beijing, CN;

Ran Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
G01T 1/24 (2013.01); H01L 27/14612 (2013.01);
Abstract

A detector pixel, an array substrate, an apparatus and a method for detecting an intensity of a ray are provided. The detector pixel includes substrate, first transistor, second transistor, storage capacitor, photosensitive element, first control line, second control line, first data line and second data line. The first and the second transistors are dual-gate transistors; the first transistor has a bottom gate connected to the first control line, a top gate connected to the second control line, a first electrode connected to the storage capacitor, and a second electrode connected to the first data line; the second transistor has a bottom gate connected to the second control line, a top gate connected to the first control line, a first electrode connected to the storage capacitor, and a second electrode connected to the second data line; and the storage capacitor is connected to the photosensitive element.


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