The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Aug. 08, 2016
Applicant:
Toray Industries, Inc., Tokyo, JP;
Inventors:
Assignee:
TORAY INDUSTRIES, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 29/786 (2006.01); B82Y 15/00 (2011.01); G01N 27/327 (2006.01); G01N 27/12 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); B82Y 15/00 (2013.01); G01N 27/3275 (2013.01); G01N 27/3278 (2013.01); G01N 27/414 (2013.01); H01L 29/786 (2013.01); H01L 51/0003 (2013.01); H01L 51/05 (2013.01); H01L 51/0545 (2013.01); B82Y 30/00 (2013.01); G01N 27/126 (2013.01); G01N 27/4146 (2013.01); H01L 51/004 (2013.01); H01L 51/0036 (2013.01); H01L 51/0048 (2013.01); H01L 51/0049 (2013.01); H01L 51/0094 (2013.01);
Abstract
The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.