The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Oct. 03, 2018
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventor:
Takashi Soga, Kyoto, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03G 3/30 (2006.01); H03F 3/21 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H03F 1/56 (2006.01); H04B 1/04 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03G 3/3042 (2013.01); H03F 1/0216 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/245 (2013.01); H04B 1/04 (2013.01); H03F 2200/451 (2013.01); H03F 2200/555 (2013.01); H04B 2001/0416 (2013.01);
Abstract
A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal, a second transistor that amplifies a signal corresponding to the second signal and outputs a third signal, a third transistor that supplies a first bias current or voltage to a base of the first transistor, and a fourth transistor that supplies a second bias current or voltage to a base of the second transistor. A ratio of an emitter area of the third transistor to an emitter area of the first transistor is larger than a ratio of an emitter area of the fourth transistor to an emitter area of the second transistor.