The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Mar. 09, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yuedi He, Beijing, CN;

Boris Kristal, Beijing, CN;

Zhuo Chen, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5072 (2013.01); H01L 51/502 (2013.01); H01L 51/5004 (2013.01); H01L 51/56 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0042 (2013.01); H01L 2251/558 (2013.01);
Abstract

The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.


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