The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Oct. 04, 2016
Applicant:

Nitto Denko Corporation, Ibaraki, JP;

Inventors:

Keisuke Okumura, Ibaraki, JP;

Satoshi Honda, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/34 (2006.01); H01L 35/08 (2006.01); B22F 3/10 (2006.01); H01L 27/16 (2006.01); H01L 35/28 (2006.01); H01L 35/16 (2006.01);
U.S. Cl.
CPC ...
H01L 35/34 (2013.01); B22F 3/10 (2013.01); H01L 27/16 (2013.01); H01L 35/08 (2013.01); H01L 35/28 (2013.01); H01L 35/16 (2013.01);
Abstract

Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.


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