logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10998479 B1

PDFFull Text
Date of Patent:
May. 04, 2021

Filed:

Oct. 12, 2018

Light emitting diode

Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Se Hee Oh, Ansan-si, KR;

Hyun A Kim, Ansan-si, KR;

Jong Kyu Kim, Ansan-si, KR;

Hyoung Jin Lim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Shaun M Campbell

Assistant Examiner:

Aneta B Cieslewicz

Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/10 (2010.01); H01L 25/075 (2006.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); F21S 41/141 (2018.01); H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/64 (2010.01); H01L 33/46 (2010.01); H01L 33/08 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 27/153 (2013.01); H01L 33/10 (2013.01); H01L 33/325 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/50 (2013.01); H01L 33/64 (2013.01); F21S 41/141 (2018.01); H01L 33/08 (2013.01); H01L 33/22 (2013.01); H01L 33/382 (2013.01); H01L 33/46 (2013.01);
Abstract

A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

Find Patent Forward Citations

Loading…