The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Mar. 08, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Kwang Yong Choi, Seoul, KR;

Min Sung Kim, Seoul, KR;

Su Ik Park, Seoul, KR;

Youn Joon Sung, Seoul, KR;

Yong Gyeong Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/62 (2013.01); H01L 33/22 (2013.01); H01L 2933/0016 (2013.01);
Abstract

An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.


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