The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Nov. 04, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Nao Nagata, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0696 (2013.01); H01L 29/083 (2013.01); H01L 29/0834 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/4238 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H02P 27/06 (2013.01);
Abstract
A semiconductor device including an IE-type trench gate IGBT requires to be improved in IE effect to reduce on voltage. The semiconductor device includes a trench gate electrode or a trench emitter electrode between an active cell region and an inactive cell region. The trench gate electrode and the trench emitter electrode are provided across the inactive cell region.