The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
May. 16, 2019
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Edward R. Van Brunt, Raleigh, NC (US);
Daniel J. Lichtenwalner, Raleigh, NC (US);
Shadi Sabri, Cary, NC (US);
Assignee:
CREE, INC., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/66333 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
Power semiconductor devices include multi-layer inter-metal dielectric patterns that include at least one reflowed dielectric material pattern and at least one non-reflowable dielectric material pattern. In other embodiments, power semiconductor devices include reflowed inter-metal dielectric patterns that are formed using sacrificial structures such as dams to limit the lateral spread of the reflowable dielectric material of the inter-metal dielectric pattern during the reflow process. The inter-metal dielectric patterns may have improved shapes and performance.