The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Jun. 30, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/08 (2006.01); B82Y 10/00 (2011.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); B82Y 10/00 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/4175 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/42392 (2013.01); H01L 29/456 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/775 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01); H01L 29/1054 (2013.01); H01L 29/665 (2013.01);
Abstract
A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.