The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Sep. 10, 2019
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Johji Nishio, Machida, JP;

Chiharu Ota, Kawasaki, JP;

Ryosuke Iijima, Setagaya, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/32 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a base body including silicon carbide, a first semiconductor region including silicon carbide and a first element, and a second semiconductor region including silicon carbide and the first element. The first semiconductor region includes first and second intermediate regions. A first concentration of the first element in the first intermediate region satisfies a first or a second condition. In the first condition, the first concentration is lower than a second concentration of the first element in the second intermediate region. In the second condition, the first concentration is higher than a third concentration of a second element included in the first intermediate region, the second concentration is higher than a fourth concentration of the second element in the second intermediate region, and a difference between the first and third concentrations is smaller than a difference between the second and fourth concentrations.


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