The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Feb. 21, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Hoon Uhm, Hwaseong-si, KR;

Ki Joong Yoon, Hwaseong-si, KR;

Taek Soo Jeon, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/30 (2006.01); H01L 51/44 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 51/442 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01);
Abstract

A semiconductor image sensor includes a substrate and an isolation insulating pattern having a trench therein, on the substrate. A lower transparent electrode is provided within the trench. This lower transparent electrode includes a first layer and a different second layer on the first layer. An organic photoelectric layer is provided on the lower transparent electrode, and an upper transparent electrode is provided on the organic photoelectric layer. The first layer may contact a bottom and a side surface of the trench, and may have a seam therein, which is at least partially filled by a portion of the second layer. The first layer may have a higher light transmission efficiency relative to the second layer and a lower electrical resistance relative to the second layer.


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