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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10998370 B1

PDFFull Text
Date of Patent:
May. 04, 2021

Filed:

Sep. 03, 2019

Semiconductor device with insulating layers forming a bonding plane between first and second circuit components, method of manufacturing the same, and electronic device

Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Hiroshi Ikakura, Kawasaki, JP;

Takumi Ogino, Koganei, JP;

Assignee:

CANON KABUSHIKI KAISHA, Tokyo, JP;

Attorney:

Venable LLP

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/48 (2006.01); H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 23/532 (2006.01); H01L 27/148 (2006.01); H01L 23/538 (2006.01); H01L 21/02 (2006.01); H01L 23/373 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 21/02367 (2013.01); H01L 21/02436 (2013.01); H01L 23/3735 (2013.01); H01L 23/5329 (2013.01); H01L 23/5383 (2013.01); H01L 25/0657 (2013.01); H01L 27/148 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01);
Abstract

A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.

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