The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Mar. 09, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Osamu Matsuura, Kuwana, JP;

Satoshi Tatara, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device includes a stacked body, a semiconductor member, and a first insulating member. Electrode films and insulating films are alternately stacked along a first direction in the stacked body. An end part of the stacked body is shaped like a staircase in which a terrace is formed for each of the electrode films. A portion of the electrode film placed in the end part is thicker than a portion of the electrode film placed in a central part of the stacked body. The semiconductor member extends in the first direction and penetrates through the central part of the stacked body. The first insulating member extends in the first direction and is provided in the end part.


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