The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Nov. 18, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Nam-Jae Lee, Cheongju-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 27/102 (2006.01); H01L 27/108 (2006.01); H01L 25/00 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/32133 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/10844 (2013.01); H01L 27/10897 (2013.01); H01L 29/66363 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/1436 (2013.01);
Abstract
A method for fabricating a vertical memory device includes: forming a memory cell array that includes a vertical thyristor and a word line over a first substrate; forming a peripheral circuit unit in a second substrate; bonding the memory cell array with the peripheral circuit unit; removing the first substrate to expose one side of the vertical thyristor; and forming a bit line that is coupled to the one side of the vertical thyristor and the peripheral circuit unit.
Lee, Nam-Jae. (2021). Vertical memory device and method for fabricating vertical memory device (U.S. Patent No. 10998316). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10998316
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile