The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Jul. 22, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Xianzhi Dai, Shanghai, CN;

Muhammad Yusuf Ali, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/76 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/76895 (2013.01); H01L 27/0259 (2013.01); H01L 27/0288 (2013.01);
Abstract

A semiconductor device has a protected node and a reference node, and a bi-directional ESD structure electrically coupled between the protected node and the reference node. The bi-directional ESD structure includes a main transistor electrically coupled between the protected node and the reference node, an upper control transistor with current nodes electrically coupled between the protected node and a control node of the main transistor, and a lower control transistor with current nodes electrically coupled between the reference node and a control node of the main transistor. The bi-directional ESD structure also includes an upper trigger network configured to provide a transient on-state signal to the upper control transistor from a positive electrical pulse on the protected node. The bi-directional ESD structure further includes a lower trigger network configured to provide a transient on-state signal to the lower control transistor from a negative electrical pulse on the protected node.


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