The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Mar. 27, 2020
Texas Instruments Incorporated, Dallas, TX (US);
Jeffrey Alan West, Dallas, TX (US);
Thomas Dyer Bonifield, Dallas, TX (US);
Yoshihiro Takei, Kashiwa, JP;
Mitsuhiro Sugimoto, Tsukuba, JP;
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A microelectronic device contains a high voltage component having an upper plate and a lower plate. The upper plate is isolated from the lower plate by a main dielectric between the upper plate and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the upper plate and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer of silicon nitride having a refractive index between 2.11 and 2.23. The lower-bandgap dielectric layer extends beyond the upper plate continuously around the upper plate. The lower-bandgap dielectric layer has an isolation break surrounding the upper plate at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the upper plate.