The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Nov. 13, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jennifer Church, Troy, NY (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Dario Goldfarb, Dobbs Ferry, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); G03F 7/70033 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01);
Abstract

A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer.


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