The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Apr. 13, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Won Jae Choi, Icheon-si, KR;

Jea Won Choi, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/50 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/1036 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 29/42 (2013.01); G11C 29/44 (2013.01); G11C 29/50004 (2013.01); G11C 29/021 (2013.01);
Abstract

A memory device includes a memory cell array, a read operator, a shift level determiner, and a read operation controller. The read operator applies a read voltage to a selected word line coupled to selected memory cells and reads the selected memory cells in response to an evaluation signal. The shift level determiner calculates a shift value indicating a difference between a number of memory cells read as on-cells and a reference number, and determines a shift level of a threshold voltage distribution for the selected memory cells. The soft read table storage stores soft read set parameters. The read operation controller determines a plurality of soft read voltages based on the shift level and the soft read set parameters and controls the read operator in response to the evaluation signal.


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