The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Nov. 13, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Tae-Sik Yun, Seoul, KR;
Dae-Suk Kim, Seoul, KR;
Seok-Cheol Yoon, Seoul, KR;
No-Guen Joo, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40618 (2013.01); G11C 11/4076 (2013.01); G11C 11/4085 (2013.01); G11C 11/4087 (2013.01); G11C 11/4091 (2013.01);
Abstract
A semiconductor memory device includes: a plurality of banks each including a plurality of cell mats and a plurality of sense amplifiers shared by adjacent cell mats; and a bank control circuit suitable for activating a normal word line of a particular cell mat of a bank selected according to a refresh command including bank information, and activating a target word line of a cell mat that does not share a sense amplifier with the particular cell mat according to a target refresh command after a preset delay time.