The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Dec. 05, 2018
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventor:

Chih-Kang Yeh, Kinmen County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G06F 3/06 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G06F 3/0616 (2013.01); G06F 3/0649 (2013.01); G06F 3/0679 (2013.01); G11C 11/5635 (2013.01); G11C 16/349 (2013.01); G11C 29/52 (2013.01); G06F 2212/401 (2013.01); G06F 2212/403 (2013.01); G06F 2212/7211 (2013.01);
Abstract

A data storing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a first data; determining whether a wear degree value of a rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode. A reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.


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