The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Nov. 12, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Hyunwoo Park, San Diego, CA (US);
Youn Sung Choi, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G01R 31/2621 (2013.01); G01R 31/2601 (2013.01);
Abstract
Aspects generally relate methods and apparatuses of gate leakage detection of a transistor. A gate pad is coupled to a gate of a MOS transistor. A gate leakage detection circuit is coupled to the gate pad, wherein the gate leakage detection circuit is configured to estimate a gate leakage current. Based on the estimated gate leakage current determining a quality of a gate fabrication process.
Park, Hyunwoo. (2021). Sensor for gate leakage detection (U.S. Patent No. 10996261). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10996261
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile