The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
May. 26, 2017
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Shinya Fujiwara, Osaka, JP;
Yasuaki Higuchi, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 29/42 (2006.01); C30B 33/10 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); C30B 29/38 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
C30B 29/42 (2013.01); C30B 11/00 (2013.01); C30B 29/38 (2013.01); C30B 33/00 (2013.01); C30B 33/10 (2013.01); H01L 21/304 (2013.01); H01L 21/306 (2013.01);
Abstract
A GaAs substrate has a first surface. The sum of the number of particles having a longer diameter of more than or equal to 0.16 μm which are present in the first surface, per cmof the first surface, and the number of damages having a longer diameter of more than or equal to 0.16 μm which are present in a second surface, per cmof the second surface, is less than or equal to 2.1, the second surface being formed by etching the first surface by 0.5 μm in a depth direction.