The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Nov. 17, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin-Woo Lee, Hwaseong-si, KR;

Hoon Han, Anyang-si, KR;

Keon-Young Kim, Seongnam-si, KR;

Jung-Hun Lim, Daejeon, KR;

Jin-Uk Lee, Sejong-si, KR;

Jae-Wan Park, Daegu, KR;

Assignees:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Soulbrain Co., Ltd., Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/08 (2006.01); H01L 27/1157 (2017.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01); C09K 13/06 (2006.01);
U.S. Cl.
CPC ...
C09K 13/08 (2013.01); H01L 21/31111 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); C09K 13/06 (2013.01);
Abstract

An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.


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