The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Oct. 05, 2017
Applicant:
Tokuyama Corporation, Yamaguchi, JP;
Inventors:
Assignee:
TOKUYAMA CORPORATION, Yamaguchi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); C01B 3/56 (2006.01); B01D 53/04 (2006.01); C01B 33/02 (2006.01); C01B 3/52 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); B01D 53/04 (2013.01); C01B 3/52 (2013.01); C01B 3/56 (2013.01); C01B 33/02 (2013.01); B01D 2253/102 (2013.01); B01D 2256/16 (2013.01); B01D 2259/40086 (2013.01);
Abstract
Provided is a method for producing polycrystalline silicon at a lighter environmental load and at low production cost. A method in accordance with the present invention for producing polycrystalline silicon includes: a silicon deposition step; a separation step; a hydrogen chloride removal step; a hydrogen refining step; an activated carbon regeneration step; and a circulation step.
Quick Actions:
Inoue, Yuichi. (2021). Method for producing polycrystalline silicon (U.S. Patent No. 10995006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10995006
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile