The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Jul. 21, 2017
Applicant:

Kabushiki Kaisha Nihon Micronics, Tokyo, JP;

Inventors:

Takuo Kudoh, Tokyo, JP;

Harutada Dewa, Tokyo, JP;

Hikaru Takano, Tokyo, JP;

Tomokazu Saito, Tokyo, JP;

Takashi Tonokawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/131 (2010.01); H01M 4/38 (2006.01); H01L 49/02 (2006.01); H01M 10/36 (2010.01);
U.S. Cl.
CPC ...
H01M 4/131 (2013.01); H01M 4/387 (2013.01); H01L 28/75 (2013.01); H01M 10/36 (2013.01);
Abstract

A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode () and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer () arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.


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