The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
May. 02, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.