The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Dec. 18, 2018
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Hiroki Sugiura, Ashigara-kami-gun, JP;

Yoshinori Kanazawa, Ashigara-kami-gun, JP;

Kimiatsu Nomura, Ashigara-kami-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 35/22 (2006.01); H01L 35/14 (2006.01); H01L 35/04 (2006.01);
U.S. Cl.
CPC ...
H01L 35/24 (2013.01); H01L 35/14 (2013.01); H01L 35/22 (2013.01); H01L 35/04 (2013.01);
Abstract

An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots. The thermoelectric conversion element of the present invention is a thermoelectric conversion element having a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer electrically connected to the p-type thermoelectric conversion layer, in which the p-type thermoelectric conversion layer contains a nanocarbon material and at least one kind of component selected from the group consisting of an onium salt and an inorganic salt, the n-type thermoelectric conversion layer contains a nanocarbon material and an onium salt, and a difference between an ionization potential of the p-type thermoelectric conversion layer and an ionization potential of the n-type thermoelectric conversion layer is equal to or smaller than 0.15 eV.


Find Patent Forward Citations

Loading…