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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10991835 B1

PDFFull Text
Date of Patent:
Apr. 27, 2021

Filed:

Aug. 08, 2019

Hydrogen diffusion barrier for hybrid semiconductor growth

Applicant:

Array Photonics, Inc., Tempe, AZ (US);

Inventors:

Aymeric Maros, San Francisco, CA (US);

Ferran Suarez, Chandler, AZ (US);

Jacob Thorp, Phoenix, AZ (US);

Michael Sheldon, Marana, AZ (US);

Ting Liu, San Jose, CA (US);

Assignee:

ARRAY PHOTONICS, INC., Tempe, AZ (US);

Attorney:

Morrison & Foerster LLP

Primary Examiner:

Evren Seven

Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/0725 (2012.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03048 (2013.01); H01L 31/02021 (2013.01); H01L 31/02327 (2013.01); H01L 31/03042 (2013.01); H01L 31/0725 (2013.01); H01L 31/1848 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01S 5/183 (2013.01); H01S 5/3013 (2013.01);
Abstract

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

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