The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Mar. 06, 2020
Tcl China Star Optoelectronics Technology Co., Ltd., Guangdong, CN;
Yutong Hu, Guangdong, CN;
Chihyuan Tseng, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Wenhui Li, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Longqiang Shi, Guangdong, CN;
Hejing Zhang, Guangdong, CN;
TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong, CN;
Abstract
A structure of an oxide thin film transistor includes: an oxide semiconducting layer, an etching stopper layer on the oxide semiconducting layer, and a source and a drain on the etching stopper layer. Two vias are formed in the etching stopper layer. The oxide semiconducting layer includes two recesses formed therein to extend through a skin layer of the oxide semiconducting layer and respectively corresponding to the two vias. The two recesses are respectively connected with and in communication with the two vias. The source and the drain are respectively filled in the two vias and the two recesses connected with the two vias to directly connect to and physically contact the oxide semiconducting layer.