The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
May. 12, 2020
Rohm Co., Ltd., Kyoto, JP;
Kenji Yamamoto, Kyoto, JP;
Tetsuya Fujiwara, Kyoto, JP;
Minoru Akutsu, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes an electron transit layer () that is formed of a nitride semiconductor, an electron supply layer () that is formed on the electron transit layer (), that is formed of a nitride semiconductor whose composition is different from the electron transit layer () and that has a recess () which reaches the electron transit layer () from a surface, a thermal oxide film () that is formed on the surface of the electron transit layer () exposed within the recess (), a gate insulating film () that is embedded within the recess () so as to be in contact with the thermal oxide film (), a gate electrode () that is formed on the gate insulating film () and that is opposite to the electron transit layer () across the thermal oxide film () and the gate insulating film (), and a source electrode () and a drain electrode () that are provided on the electron supply layer () at an interval such that the gate electrode () intervenes therebetween.