The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 11, 2019
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Chang Hwan Choi, Seoul, KR;
Dong Hwan Lim, Suwon-si, KR;
Abstract
Disclosed are a three-dimensional tunneling field-effect transistor and a method of fabricating the same. A method of fabricating a three-dimensional tunneling field-effect transistor according to an embodiment of the present disclosure includes growing a buffer layer, an embedded source layer, an etch stop layer, an active source layer, a channel layer, and a drain layer on a substrate; depositing a metal layer on the drain layer, and then forming a pattern in a mesa structure shape; forming a vertical gate at one end of each of the etch stop layer, the active source layer, the channel layer, and the drain layer; isolating the active source layer from the substrate to form a first air bridge; isolating the drain layer from the substrate to form a second air bridge; and isolating the vertical gate from the substrate to form a third air bridge.